Invention:
This invention is a magnetic tunneling junction (MTJ) design to realize more efficient switching. This design includes the use of an antiferromagnetic layer.
Background:
Spintronics represents a promising solution to address the problem of greatly increased power consumption in CMOS transistors for memory and logic applications. Storing information as spin, instead of charge, spintronics offers a unique route to eliminate energy waste in the stand-by state. A large part of the present spintronics research focuses on reducing the dynamic power consumption and increasing the on/off ratio (magnetoresistance) in various structures. Magnetic tunnel junctions (MTJs) have been arguably the most important building blocks in spintronic technology. There is a need for advanced MTJs that dramatically reduce switching energy while maintaining a reasonably high tunneling magnetoresistance and strong thermal stability at room temperature
Applications:
- Magnetic hard disk drives
- Random access memories
- Spin logic cell
- Sensors
- Microwave oscillators
- Amplifiers
Advantages:
- Energy efficient MTJ switching for spintronics computing
