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Energy Efficient Switching In Magnetic Tunnel Junctions With An Antiferromagnetic Barrier

This invention is a magnetic tunneling junction (MTJ) design to realize more efficient switching. This design includes the use of an antiferromagnetic layer. Background: Spintronics represents a promising solution to address the problem of greatly increased power consumption in CMOS transistors for memory and logic applications. Storing information...

Published: 3/12/2024 | Inventor(s): Shufeng Zhang, Weigang Wang, Yihong Cheng, Meng Xu, Pravin Khanal

Keywords(s):

Category(s): Technology Classifications > Engineering & Physical Sciences > Electronics > Data Storage, Technology Classifications > Engineering & Physical Sciences > Electronics > Computer Hardware, Technology Classifications > Engineering & Physical Sciences > Electronics > Digital Circuits

Chromium Oxide for Enhanced Magnetic Tunnel Junctions

This invention is a novel magnetic tunnel junction (MTJ) design, which utilizes an antiferromagnetic material in a new configuration to reduce high switching energies in spintronics. Background: Spintronics represents a promising solution to ever increasing power consumption and heat generation in semiconductor transistors by utilizing both electron...

Published: 9/27/2024 | Inventor(s): Weigang Wang, Ty Newhouse-Illige, Ali Habiboglu, Yihong Cheng, Shufeng Zhang, Meng Xu, Pravin Khanal

Keywords(s):

Category(s): Technology Classifications > Materials, Technology Classifications > Engineering & Physical Sciences > Devices & Instrumentation, Technology Classifications > Engineering & Physical Sciences > Electronics