Invention:
This technology is a thermal imaging device that uses plasmonic nanostructures integrated with a semiconductor device to enable infrared (IR) detection and imaging within a standard Complementary Metal-Oxide-Semiconductor (CMOS) framework. The device also has the ability to tune the resonance of the plasmonic nanostructures to specific infrared wavelengths, allowing for the detection of a variety of materials and substances based on their unique thermal signatures. By leveraging existing CMOS manufacturing processes, this technology can be produced at scale, reducing costs and making thermal imaging more accessible for a wide range of applications. This includes surveillance and reconnaissance, where the ability to detect and classify objects based on their thermal signatures is crucial, as well as medical imaging, where non-invasive temperature measurements can provide valuable diagnostic information. Furthermore, the multispectral imaging capabilities of this device open up new possibilities for material identification and analysis, environmental monitoring, and industrial inspection, among other applications.
Background:
Previous thermal imaging devices tended to have large energy requirements, and many are too bulky to be viable for the myriad of applications this technology enables across various industries. This invention addresses those shortcomings and has the potential to revolutionize the market for thermal imaging solutions.
Applications:
- Aerospace & defense
- Surveillance & reconnaissance
- Environmental monitoring
- Automotive
- Medical imaging
- Industrial inspection
Advantages:
- Enables both IR imaging and detection
- Decreased power requirements
- Cost effective due to leveraging existing CMOS foundry processes for fabrication
- Compact
- Versatile use in a broad range of industries
