Invention:
This invention introduces a novel fabrication method that enables the formation of high aspect ratio features in non-silicon materials. Unlike conventional deep reactive ion etching (RIE), which struggles with certain materials, this technique sequentially builds structures through multiple cycles of resist patterning, deposition, and alignment. By leveraging conformal deposition materials like silicon nitride, the process achieves mechanically stable, high aspect ratio features without requiring a single deep etch. This method results in a vertically assembled structure with the desired high aspect ratio, all while maintaining dimensional accuracy and mechanical stability.
Background:
Photonic integrated circuits (PICs) and semiconductor devices often rely on high aspect ratio features for optimal performance. Traditional RIE techniques work well for silicon but are limited when applied to alternative materials, leading to fabrication constraints. This invention overcomes these limitations by introducing a multi-step stacking approach, enabling advanced feature formation in diverse material systems without compromising structural integrity.
Applications:
- Photonic Integrated Circuits (PICs)
- Semiconductor and Microelectronics Fabrication
- Advanced Lithography Processes
- MEMS and NEMS Devices
- Optical and Quantum Computing Components
- High-Precision Nanofabrication
Advantages:
- Enables high aspect ratio feature formation in non-silicon materials
- Eliminates the need for deep RIE, expanding material compatibility
- Enhances mechanical integrity and dimensional fidelity through layered reinforcement
- Compatible with existing lithography and deposition techniques, reducing integration costs
