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A Highly Thermal Stable MRAM Unit
This invention enables a perpendicular magnetic tunnel junction (pMTJ) device that exhibits high thermal stability when exposed to temperatures greater than 400° C. and even greater than 500° C. for an hour (and sometimes longer). This invention is available for a non-exclusive license and has an issued US Patent 10,431,733.
Background:
Magnetic...
Published: 3/12/2024
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Inventor(s): Weigang Wang, Hamid Almasi
Keywords(s):
Category(s): Technology Classifications > Engineering & Physical Sciences > Electronics > Data Storage
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