Invention:
This invention addresses a critical bottleneck in advanced CMOS node development by providing a more efficient and cost-effective solution for extreme ultraviolet (EUV) lithography. The current EUV lithography tools are not only extremely expensive, often costing billions of dollars, but also complex and large. By introducing a suspended nanomembrane-based system with diffractive optical elements and transmission masks, this technology has the potential to significantly reduce the cost and complexity of EUV lithography, making it more accessible and scalable for semiconductor manufacturing.
